Laser Processing of Ion Implanted Semiconductor Materials for Device Applications
- 1 April 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 28 (2) , 1754-1758
- https://doi.org/10.1109/tns.1981.4331514
Abstract
Both pulsed and CW lasers have been used to anneal ion implanted single crystal silicon, polysilicon and ion implanted devices. The advantages and limitations of each type of laser and laser processing in general is discussed. Our results and those in the literature are compared to conventional thermal anneals. The thermal stability of ion-implanted, laser-annealed, single crystal silicon and polysilicon is reported.Keywords
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