Pulsed-laser annealing of ion-implanted polycrystalline silicon films
- 1 June 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (11) , 737-739
- https://doi.org/10.1063/1.90678
Abstract
Polysilicon films, about 0.6 μm thick, deposited on SiO2 grown on silicon substrates, were implanted with different doses of 11B, 31P, or 75As ions and laser annealed with a Q‐switched Nd‐glass or ruby laser. It was found that complete activation of the implanted dopant ions could be achieved with a pulse power density as low as 16 MW/cm2, that a two to three times reduction of resistivity could be achieved in implanted polysilicon films compared with samples thermally annealed, and that there were little or no redistributions of the implanted profiles.Keywords
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