Optically induced electron spin resonance and spin-dependent recombination in Si/SiO2
- 15 January 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (2) , 228-230
- https://doi.org/10.1063/1.94680
Abstract
In state‐of‐the‐art Si/SiO2 wafers the concentration of paramagnetic interface states (≂1010 cm−2) is almost too low to be detected by electron spin resonance (ESR). This letter describes experiments which show that the ESR signal of singly occupied dangling bond defects (so called Pb centers) may be considerably enhanced by optical irradiation in the wavelength region 650–1050 nm. Furthermore, the Pb center resonance may be observed as a change in the photocurrent produced by optical excitation in this region. Such spin‐dependent photoconductivity results from the spin selection rules for electron‐hole recombination at the defect. This observation demonstrates that the Pb center levels in Si/SiO2 wafers act as both recombination centers and interface states.Keywords
This publication has 11 references indexed in Scilit:
- An electron spin resonance study of radiation-induced electrically active paramagnetic centers at the Si/SiO2 interfaceJournal of Applied Physics, 1983
- Luminescence and recombination in hydrogenated amorphous siliconAdvances in Physics, 1981
- Electronic structure of defects at Si/SiO2 interfacesJournal of Vacuum Science and Technology, 1981
- Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafersJournal of Applied Physics, 1981
- Optical enhancement of the electron paramagnetic resonance signal from SiIII centers at the Si/SiO2 interfaceJournal of Applied Physics, 1981
- Spin-dependent photoconductivity in n-type and p-type amorphous siliconSolid State Communications, 1977
- Radiation-Induced Defect Centers in Thermally Grown Oxide FilmsIEEE Transactions on Nuclear Science, 1975
- Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance IJapanese Journal of Applied Physics, 1971
- Radiation-induced increase in surface recombination velocity of thermally oxidized silicon structuresProceedings of the IEEE, 1966
- Angular Distributions of (α, n) Reaction son Be and CJournal of the Physics Society Japan, 1963