Radiation-induced increase in surface recombination velocity of thermally oxidized silicon structures
- 1 January 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 54 (11) , 1601-1602
- https://doi.org/10.1109/proc.1966.5217
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditionsSolid-State Electronics, 1966
- A model for radiation damage in metal-oxide-semiconductor structuresProceedings of the IEEE, 1966
- Influence of heat treatments and ionizing irradiations on the charge distribution and the number of surface states in the Si-SiO2systemIEEE Transactions on Electron Devices, 1966
- THE EFFECT OF LOW-ENERGY ELECTRON IRRADIATION OF METAL-OXIDE-SEMICONDUCTOR STRUCTURESApplied Physics Letters, 1965
- Surface state density variations on MOS structures due to gamma radiationProceedings of the IEEE, 1965