THE EFFECT OF LOW-ENERGY ELECTRON IRRADIATION OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES
- 1 May 1965
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 6 (9) , 181-182
- https://doi.org/10.1063/1.1754224
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- REVERSIBLE CHANGES IN TRANSISTOR CHARACTERISTICS CAUSED BY SCANNING ELECTRON MICROSCOPE EXAMINATIONApplied Physics Letters, 1965
- Simple Physical Model for the Space-Charge Capacitance of Metal-Oxide-Semiconductor StructuresJournal of Applied Physics, 1964
- Field Effect‐Capacitance Analysis of Surface States on SiliconPhysica Status Solidi (b), 1963