REVERSIBLE CHANGES IN TRANSISTOR CHARACTERISTICS CAUSED BY SCANNING ELECTRON MICROSCOPE EXAMINATION
- 1 January 1965
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 6 (1) , 3-4
- https://doi.org/10.1063/1.1754122
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Evaluation of Passivated Integrated Circuits Using the Scanning Electron MicroscopeJournal of the Electrochemical Society, 1964
- MICROSCOPY OF INTERNAL CRYSTAL IMPERFECTIONS IN Si p-n JUNCTION DIODES BY USE OF ELECTRON BEAMSApplied Physics Letters, 1963
- Surface Effects of Radiation on Transistors*Bell System Technical Journal, 1963