MICROSCOPY OF INTERNAL CRYSTAL IMPERFECTIONS IN Si p-n JUNCTION DIODES BY USE OF ELECTRON BEAMS
- 1 December 1963
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 3 (11) , 206-207
- https://doi.org/10.1063/1.1753850
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- X-Ray Observations of Diffusion-Induced Dislocations in SiliconJournal of Applied Physics, 1962
- Effects of Certain Chemical Treatments and Ambient Atmospheres on Surface Properties of SiliconJournal of the Electrochemical Society, 1958
- LIII. The Examination of p-n Junctions with the Scanning Electron Microscope†Journal of Electronics and Control, 1957
- The scanning electron microscope and its fields of applicationBritish Journal of Applied Physics, 1955