Density of Mid-Gap States for Undoped a-Si1-xGex:H and a-Si:H Determined by Steady-State Heterojunction-Monitored Capacitance Method
- 1 April 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (4A) , L513
- https://doi.org/10.1143/jjap.27.l513
Abstract
A simple technique has been described for determining the density of mid-gap states of highly resistive amorphous semiconductors, using amorphous/crystalline heterojunction structures. The technique has been tested and applied on undoped hydrogenated amorphous silicon films and silicon-germanium alloy films, covering the optical gap range of 1.30 to 1.76 eV. Those densities obtained from this technique have been found to be densities of singly-occupied dangling bonds.Keywords
This publication has 7 references indexed in Scilit:
- Steady state and transient transport in a-Si, Ge : H, F alloysJournal of Non-Crystalline Solids, 1987
- Schottky barrier junctions of hydrogenated amorphous silicon-germanium alloysJournal of Applied Physics, 1987
- Optical absorption edge of hydrogenated amorphous silicon studied by photoacoustic spectroscopyPhilosophical Magazine Part B, 1987
- Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si–Ge Alloys from Glow-Discharge PlasmaJapanese Journal of Applied Physics, 1986
- Electrical properties of n-amorphous/p-crystalline silicon heterojunctionsJournal of Applied Physics, 1984
- Density of the gap states in undoped and doped glow discharge a-Si:HSolar Energy Materials, 1983
- The interpretation of capacitance and conductance measurements on metal-amorphous silicon barriersPhilosophical Magazine Part B, 1979