Steady state and transient transport in a-Si, Ge : H, F alloys
- 1 December 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 97-98, 1023-1026
- https://doi.org/10.1016/0022-3093(87)90246-8
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Electronic States In Glow-Discharge a-SiGex:H:(F) AlloysJapanese Journal of Applied Physics, 1986
- Urbach tail and gap states in hydrogenated a-SiC and a-SiGe alloysSolid State Communications, 1985
- Structural, electrical, and optical properties of a-:H and an inferred electronic band structurePhysical Review B, 1985
- Electron-spin-resonance study of boron-doped amorphous: H alloysPhysical Review B, 1984
- Density of the gap states in undoped and doped glow discharge a-Si:HSolar Energy Materials, 1983