Hydrostatic-pressure dependence of the ideal-neutral-vacancy levels in GaAs

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Abstract
A calculation is presented of the hydrostatic-pressure dependence of the ideal-neutral-vacancy levels in GaAs. This model produces triplet anion and cation bound states and a singlet anion bound state. It is found that the pressure derivatives of the triplet states are quite small when measured with respect to the valence-band maximum. This qualitative result does not depend on the position of the triplet-state energy levels in the band gap and is independent of our model parameters. The pressure derivative of the singlet-state level depends on the position of the level in the gap and is model dependent.