Alternative microstructure of GaN nucleation layers grown by low pressure metal-organic vapor phase epitaxy on sapphire substrate
- 17 March 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (11) , 1408-1410
- https://doi.org/10.1063/1.118591
Abstract
Predominately hexagonal GaN nucleation layers were grown on sapphire substrate by low pressure metal-organic vapor phase epitaxy. Tilt angles of GaN single crystallites about the normal of sapphire substrate are determined to be in the range from 0° to 5° by using selected area electron diffraction. A small portion of cubic phase of GaN was observed to be selectively distributed in the grain boundary areas and the instantaneous surface state is suggested to play an important role in the nucleation of the Zincblende phase. Phase transition from hexagonal to cubic GaN caused by heavy radiation from ion beam was also noticed. A critical temperature is proposed to exist in forming predominately cubic or hexagonal GaN nucleation layer.Keywords
This publication has 17 references indexed in Scilit:
- Growth defects in GaN films on sapphire: The probable origin of threading dislocationsJournal of Materials Research, 1996
- Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor depositionApplied Physics Letters, 1996
- Temperature-mediated phase selection during growth of GaN on (111)A and (1̄1̄1̄)B GaAs substratesApplied Physics Letters, 1995
- Synthesis of GaN by N ion implantation in GaAs (001)Applied Physics Letters, 1995
- Formation of threading defects in GaN wurtzite films grown on nonisomorphic substratesApplied Physics Letters, 1995
- High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substratesApplied Physics Letters, 1995
- High dislocation densities in high efficiency GaN-based light-emitting diodesApplied Physics Letters, 1995
- Low pressure metalorganic chemical-vapor deposition of cubic GaN over (100) GaAs substratesApplied Physics Letters, 1994
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986