Low pressure metalorganic chemical-vapor deposition of cubic GaN over (100) GaAs substrates
- 7 November 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (19) , 2407-2409
- https://doi.org/10.1063/1.112690
Abstract
We report on the low pressure metal organic chemical‐vapor deposition of single crystal cubic GaN films over (100) GaAs substrates. Using photoluminescence and direct optical absorption measurements we estimate the band gap for c‐GaN at room temperature to be 3.3 eV. Reflection high energy electron diffraction, x‐ray, transmission electron microscopy, optical absorption, and room‐temperature photoluminescence data are presented to establish the quality of a 0.8‐μm‐thick cubic GaN film over (100) GaAs substrate. Preliminary measurement results for the carrier density and mobility of the as‐deposited c‐GaN film are also presented.Keywords
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