Nitride based high power devices: design and fabrication issues
- 1 December 1998
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 42 (12) , 2289-2294
- https://doi.org/10.1016/s0038-1101(98)00227-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Electronic structure of GaN stacking faultsPhysical Review B, 1997
- High field flashover strength of intrinsic gallium nitride and aluminum nitride in vacuumApplied Physics Letters, 1996
- Halide Vapor Phase Epitaxy of Gallium Nitride Films on Sapphire and Silicon SubstratesMRS Proceedings, 1995
- Wide bandgap compound semiconductors for superior high-voltage unipolar power devicesIEEE Transactions on Electron Devices, 1994