Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes
- 1 January 2004
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 261 (2-3) , 359-363
- https://doi.org/10.1016/j.jcrysgro.2003.11.028
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education (88-FA06-AB)
- National Science Council (92-2120-M-009-006, 92-2215-E-009-015)
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