Threshold Estimation of GaN-Based Surface Emitting Lasers Operating in Ultraviolet Spectral Region

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Abstract
The GaN-based vertical cavity surface emitting laser operating in the ultraviolet spectral region is proposed and its threshold current density is estimated. The calculated result indicates that low-threshold surface emitting lasers using a GaN layer as an active region can be realized by employing reasonably highly reflective mirrors such as AlN/AlGaN multilayer mirrors.