GaInAsP/InP surface-emitting laser diode
- 1 November 1986
- journal article
- Published by Springer Nature in Optical and Quantum Electronics
- Vol. 18 (6) , 403-422
- https://doi.org/10.1007/bf02041165
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
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- Temperature dependence of the threshold of GaInAsP/InP surface emitting junction lasersApplied Physics Letters, 1985
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- Two-dimensional array of GaInAsP/InP surface-emitting lasersElectronics Letters, 1985
- GaInAsP/InP surface emitting injection laser with a ring electrodeIEEE Journal of Quantum Electronics, 1984
- Lasing characteristics of improved GaInAsP/InP surface emitting injection lasersElectronics Letters, 1983
- GaInAsP/InP surface emitting injection lasers with short cavity lengthIEEE Journal of Quantum Electronics, 1983
- Surface-emitting GaInAsP/InP injection laser with short cavity lengthElectronics Letters, 1982
- GaInAsP/InP Surface Emitting Injection Laser with Buried HeterostructuresJapanese Journal of Applied Physics, 1981
- GaInAsP/InP Surface Emitting Injection LasersJapanese Journal of Applied Physics, 1979