GaInAsP/InP surface emitting injection lasers with short cavity length
- 1 June 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 19 (6) , 1035-1041
- https://doi.org/10.1109/jqe.1983.1072000
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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- Spontaneous emission factor β for injection lasersJournal of Applied Physics, 1981
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- The temperature dependence of the threshold current of GaInAsP/InP DH lasersIEEE Journal of Quantum Electronics, 1981
- Radiance saturation in small-area GaInAsP/InP and GaAlAs/GaAs LED'sIEEE Transactions on Electron Devices, 1981
- 1.11-1.67 µmIEEE Journal of Quantum Electronics, 1980
- GaInAsP/InP Surface Emitting Injection LasersJapanese Journal of Applied Physics, 1979
- GaInAsP/InP DH Laser Grown by Newly Designed Vertical LPE FurnaceJapanese Journal of Applied Physics, 1977
- LONGITUDINAL INJECTION-PLASMA LASER OF InSbApplied Physics Letters, 1965