Investigation of Transport Properies in Pb1-xSnxTe Doped with Indium
- 1 February 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (2R)
- https://doi.org/10.1143/jjap.23.216
Abstract
The electrical resistivity and the Hall coefficient (R H ) vs temperature (4.2K≦T≦300 K) in Pb1-x Sn x Te/In (0.21≦x≦0.35) have been measured. In the semi-insulating region (x=0.30), a sign inversion of R H with respect to the magnetic field is observed at (60 K≦T≦100 K), and this is due to the coexistence of electrons and holes. From this phenomenon, the mobility ratio of electrons and holes has been determined for the first time in this system. Using these results, the composition and temperature dependence of the chemical potential in Pb1-x Sn x Te/In have been determined systematically. The results can be explained qualitatively by the autocompensation model (the Anderson negative U model).Keywords
This publication has 6 references indexed in Scilit:
- Quantum oscillation of carrier concentration due to fermi level pinning by doped indium impurities in Pb1−XSnXTeSolid State Communications, 1983
- Observation of Local Modes in Pb1-xSnxTe Doped with Group III Elements (In and Ga)Journal of the Physics Society Japan, 1983
- Switching effects in the dielectric phase of the Pb1−xSnxTe (In) compoundsSolid State Communications, 1982
- Electrical properties of indium-doped lead tin tellurideApplied Physics Letters, 1979
- Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1976
- Nuclear-Magnetic-Resonance Studies in PbTe and : An Experimental Determination of Band Parameters and Magnetic Hyperfine ConstantsPhysical Review B, 1973