Electrical properties of indium-doped lead tin telluride
- 1 May 1979
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (9) , 607-609
- https://doi.org/10.1063/1.90891
Abstract
Starting at room temperature the Hall constant of In-doped lead tin telluride increases exponentially with inverse temperature, then decreases, and finally flattens out. This behavior is explained on the basis of autocompensation and the positive temperature dependence of the band gap.Keywords
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