Growth of Low and Homogeneous Dislocation Density GaAs Crystal by Improved LEC Technique
- 1 January 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (1A) , L23-25
- https://doi.org/10.1143/jjap.23.l23
Abstract
An improved LEC technique of enhanced heating of B2O3 encapsulant layer through the windows of susceptor cylinder is described. By this technique, low temperature gradients of 10∼25°C/cm in the axial direction and 5°C/cm in the radial direction were achieved. Two-inch diameter crystals grown by this technique with a slow cooling rate exhibited quite low dislocation density of 8×103 to low 104 cm-2 order from front to tail of the crystal.Keywords
This publication has 2 references indexed in Scilit:
- A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs CrystalsBell System Technical Journal, 1980
- Creation of defects during the growth of semiconductor single crystals and filmsJournal of Crystal Growth, 1978