Creation of defects during the growth of semiconductor single crystals and films
- 1 August 1978
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 44 (1) , 61-74
- https://doi.org/10.1016/0022-0248(78)90329-9
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Multicomponent solid-solution semiconductor lasersIEEE Journal of Quantum Electronics, 1977
- High-quantum-efficiency photoemission from an InGaAsP photocathodeApplied Physics Letters, 1976
- Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ mApplied Physics Letters, 1976
- Low-threshold LPE In1−x′Gax′P1−z′ Asz′/In1−xGaxP1−zAsz/In1− x′ Gax′P1−z′Asz′ yellow double-heterojunction laser diodes (J<104 A/cm2, λ∼5850 Å, 77 °K)Applied Physics Letters, 1975
- Interaction of Slip Dislocations in Silicon Crystals Having Low Dislocation DensitiesPhysica Status Solidi (a), 1975
- Phase equilibria in III–V quaternary systems—application to Al-Ga-P-AsJournal of Physics and Chemistry of Solids, 1974
- The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystalsJournal of Applied Physics, 1972