The surface science of semiconductor processing: gate oxides in the ever-shrinking transistor

Publisher Website

10 March 2002

journal article
Published by Elsevier in Surface Science

Vol. 500 (1-3) , 859-878
https://doi.org/10.1016/s0039-6028(01)01585-0

Abstract

No abstract available

This publication has 48 references indexed in Scilit:

Chemisorption pathways and Si 2p core-level shifts for the interaction of spherosiloxane clusters with Si(100): Implications for photoemission in Si/SiO2 systems
Applied Physics Letters, 2000
New Structural Model for $Si / {SiO}_{2}$ Interfaces Derived from Spherosiloxane Clusters: Implications for Si $2 p$ Photoemission Spectroscopy
Physical Review Letters, 2000
Structural properties of thin films of high dielectric constant materials on silicon
Microelectronic Engineering, 1999
Study of Thermal Stability of Cvd Ta₂0₅/Si Interface
MRS Proceedings, 1999
Heterogeneous nucleation of oxygen on silicon: Hydroxyl-mediated interdimer coupling on $Si (100) - (2 \times 1)$
Physical Review B, 1998
Silicon Epoxide: Unexpected Intermediate during Silicon Oxide Formation
Physical Review Letters, 1998
Pathways for initial water-induced oxidation of Si(100)
Applied Physics Letters, 1998
Extracting site-specific reaction rates from steady state surface morphologies: Kinetic Monte Carlo simulations of aqueous Si(111) etching
The Journal of Chemical Physics, 1998
Dynamical Charge Tensors and Infrared Spectrum of Amorphous ${SiO}_{2}$
Physical Review Letters, 1997
Si/ ${SiO}_{2}$ interface: New structures and well-defined model systems
Physical Review Letters, 1993