Si/SiO2interface: New structures and well-defined model systems

A well-defined silicon oxide/silicon interface way synthesized by the reaction of the precursor cluster ${\mathrm{H}}_8$ ${\mathrm{Si}}_8$ ${\mathrm{O}}_{12}$ with Si(100) surface and characterized using Si 2p core level photoemission spectroscopy. Information gained regarding the assignments of silicon oxide group shifts and peak widths is used to evaluate assumptions and assignments of photoemission spectra of silicon oxide interfaces.