Determination of the grain boundary recombination velocity in polycrystalline silicon as a function of illumination from photoconductance measurements
- 31 May 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (5) , 417-422
- https://doi.org/10.1016/0038-1101(82)90127-7
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Grain boundary potential determination in polycrystalline silicon by the scanning light spot techniqueJournal of Applied Physics, 1981
- Recombination velocity at grain boundaries in polycrystalline Si under optical illuminationIEEE Electron Device Letters, 1980
- Effects of grain boundaries in polycrystalline solar cellsApplied Physics Letters, 1980
- Transition with grain size from electrode-limited to bulk-limited conduction in polycrystalline semiconductorsApplied Physics Letters, 1980
- Interface recombination of charge carriers in bicrystalsJournal of Applied Physics, 1979
- Enhanced carrier collection at grain-boundary barriers in solar cells made from large grain polycrystalline materialSolid-State Electronics, 1979
- The effects of grain boundary and interface recombination on the performance of thin-film solar cellsSolid-State Electronics, 1978
- Transport properties of polycrystalline silicon filmsJournal of Applied Physics, 1978
- Electronic processes at grain boundaries in polycrystalline semiconductors under optical illuminationIEEE Transactions on Electron Devices, 1977
- Semiconductor profiling using an optical probeSolid-State Electronics, 1975