The effect of implantation on explosively crystallized a-Si
- 1 January 1983
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (1) , 392-394
- https://doi.org/10.1063/1.331715
Abstract
Implantation in deposited a‐Si lowers the threshold temperature of the explosive phenomena. We observe interaction between solid‐ and liquid‐phase explosive crystallization. In the solid‐phase explosive crystallization mode, an implanted layer crystallizes independently of the underlying a‐Si.This publication has 4 references indexed in Scilit:
- Amorphous-crystalline boundary dynamics in cw laser crystallizationPhysical Review B, 1982
- Explosive crystallization of a-Si films in both the solid and liquid phasesApplied Physics Letters, 1981
- Influence of cw laser scan speed in solid-phase crystallization of amorphous Si film on Si3N4/glass substrateApplied Physics Letters, 1981
- Explosive crystallization of amorphous germaniumApplied Physics Letters, 1981