Reduction of photoconductive gain in quantum well infrared photodetectors
- 15 July 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (2) , 1257-1259
- https://doi.org/10.1063/1.362868
Abstract
In this work, we show that there is a reduction of photoconductive gain g in quantum well infrared photodetectors from its classical value. The reduction is caused by the quantum nature of electron transport in these structures. On the other hand, the generation-recombination noise is unaffected by the transport model, and remains to be the same as a classical photoconductor. The reduction of g leads to an apparent noise increase in these structures, i.e., the noise gain deduced from the noise measurement is larger than g deduced from the photoconductivity measurements. We compared the present theory with existing experimental data, and found reasonable agreement.This publication has 9 references indexed in Scilit:
- Generalized relationship between gain, noise, and capture probability of quantum well infrared photodetectorsApplied Physics Letters, 1994
- Noise and photoconductive gain in AlGaAs/GaAs quantum well intersubband infrared photodetectorsJournal of Applied Physics, 1994
- On the dark current noise of quantum well infrared photodetectorsApplied Physics Letters, 1994
- Photoconductive gain and generation-recombination noise in multiple-quantum-well infrared detectorsApplied Physics Letters, 1993
- Noise gain and operating temperature of quantum well infrared photodetectorsApplied Physics Letters, 1992
- Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectorsJournal of Applied Physics, 1992
- Large photoconductive gain in quantum well infrared photodetectorsApplied Physics Letters, 1990
- High-detectivity GaAs quantum well infrared detectors with peak responsivity at 8.2 μmJournal of Applied Physics, 1990
- Detection of Optical and Infrared RadiationPublished by Springer Nature ,1978