Formation of submicron growth defects during vapour deposition of GaAs films
- 1 January 1980
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 15 (6) , 683-689
- https://doi.org/10.1002/crat.19800150609
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Studies on Chemically Etched Silicon, Gallium Arsenide, and Gallium Phosphide Surfaces by Auger Electron SpectroscopyJapanese Journal of Applied Physics, 1976
- A review of etching and defect characterisation of gallium arsenide substrate materialThin Solid Films, 1976
- Residual Impurities in High-Purify Epitaxial GaAsJournal of the Electrochemical Society, 1970
- Surface Processes in the Growth of Silicon on (111) Silicon in Ultrahigh VacuumJournal of Applied Physics, 1968