Silicon carbide merged PiN Schottky diode switching characteristics and evaluation for power supply applications
- 7 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 5, 2948-2954
- https://doi.org/10.1109/ias.2000.882585
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Characteristics and utilization of a new class of low on-resistance MOS-gated power devicePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 1500 V, 4 amp 4H-SiC JBS diodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Electrothermal Simulation of 4H-SiC Power DevicesMaterials Science Forum, 1998
- Fundamentals of Power ElectronicsPublished by Springer Nature ,1997