Characteristics and utilization of a new class of low on-resistance MOS-gated power device
- 20 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 1073-1079
- https://doi.org/10.1109/ias.1999.801637
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT)IEEE Transactions on Power Electronics, 1991