An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT)
- 1 April 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 6 (2) , 208-219
- https://doi.org/10.1109/63.76807
Abstract
The drive circuit requirements of the insulated gate bipolar transistor (IGBT) are explained with the aid of an analytical model. It is shown that nonquasi-static effects limit the influence of the drive circuit on the time rate-of-change of anode voltage. Model results are compared with measured turn-on and turn-off waveforms for different drive, load, and feedback circuits, and for different IGBT base lifetimes.Keywords
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