InAsGaAs quantum boxes obtained by self-organized growth: Intrinsic electronic properties and applications
- 31 December 1996
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 40 (1-8) , 807-814
- https://doi.org/10.1016/0038-1101(95)00367-3
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Realization of optically active strained InAs island quantum boxes on GaAs(100) via molecular beam epitaxy and the role of island induced strain fieldsJournal of Crystal Growth, 1995
- Optical investigation of the self-organized growth of InAs/GaAs quantum boxesJournal of Crystal Growth, 1995
- Critical layer thickness for self-assembled InAs islands on GaAsPhysical Review B, 1994
- Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsPhysical Review Letters, 1994
- Initial growth stage and optical properties of a three-dimensional InAs structure on GaAsJournal of Applied Physics, 1994
- Self-organized growth of regular nanometer-scale InAs dots on GaAsApplied Physics Letters, 1994
- Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)Applied Physics Letters, 1990
- Optical properties of some III–V strained-layer superlatticesSuperlattices and Microstructures, 1989
- First stages of the MBE growth of InAs on (001)GaAsJournal of Crystal Growth, 1987
- Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985