Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition
- 27 December 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (26) , 4159-4161
- https://doi.org/10.1063/1.125568
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Spontaneous Ordering in Bulk GaN:Mg SamplesPhysical Review Letters, 1999
- TEM Study of Mg-Doped Bulk GaN CrystalsMRS Proceedings, 1999
- Structures of polytypoids in AIN crystals containing oxygenPhilosophical Magazine A, 1998
- Characteristics of Mg‐Doped GaN Grown by Metallorganic Chemical Vapor DepositionJournal of the Electrochemical Society, 1997
- Oxygen incorporation in aluminum nitride via extended defects: Part I. Refinement of the structural model for the planar inversion domain boundaryJournal of Materials Research, 1995
- The Nature of Oxygen-Related Polytypoids in the Aluminum Nitride-Aluminum Oxide SystemMRS Proceedings, 1993
- GaN Growth Using GaN Buffer LayerJapanese Journal of Applied Physics, 1991
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Sialons and related nitrogen ceramicsJournal of Materials Science, 1976
- Photoluminescence of Zn-implanted GaNApplied Physics Letters, 1974