Photoluminescence of Zn-implanted GaN
- 15 March 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (6) , 281-283
- https://doi.org/10.1063/1.1655183
Abstract
The photoluminescence spectrum of Zn‐implanted GaN peaks at 2.87 eV at room temperature. The emission efficiency decreases linearly with the logarithm of the Zn concentration in the range 1–20×1018 Zn/cm3.Keywords
This publication has 6 references indexed in Scilit:
- Luminescence of insulating Be-doped and Li-doped GaNJournal of Luminescence, 1973
- Violet luminescence of Mg-doped GaNApplied Physics Letters, 1973
- Luminescence in GaNJournal of Luminescence, 1973
- GaN blue light-emitting diodesJournal of Luminescence, 1972
- Donor-acceptor pair recombination in GaNSolid State Communications, 1971
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969