Theory of optical interband transitions in strained Si1−yCy grown pseudomorphically on Si (001)
- 15 October 1995
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (8) , 5209-5211
- https://doi.org/10.1063/1.359696
Abstract
Recently W. Kissinger, M. Weidner, H. J. Osten, and M. Eichler [Appl. Phys. Lett. 65, 3356 (1994)] reported ellipsometry and electroreflectance measurements on the E0, E1, and E2 critical point energies in strained Si1−yCy alloys grown pseudomorphically on Si (001) using molecular‐beam epitaxy. We present a theory explaining these energies using established deformation‐potential theory and interpret the results and their implications for the band structure of these alloys.This publication has 20 references indexed in Scilit:
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