Dispersive Hydrogen Motion and Creation of Light-Induced Defects in Hydrogenated Amorphous Silicon
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
This paper investigates the application of the dispersive hydrogen diffusion defect kinetic equation for the generation of light-induced defects. Self-limited monomolecular carrier defect generation by dispersive motion can explain the observed t1/3 and the G0.6 dependence where t is the illumination time and G is the illumination intensity as well as the equilibrium defect density as a function of temperature. However, the temperature dependence of the creation rate and compatibility with current degradation experiments remain unresolved problems.Keywords
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