SWITCHING AND LOW-FIELD BREAKDOWN IN n-GaAs BULK DIODES
- 15 August 1966
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 9 (4) , 140-142
- https://doi.org/10.1063/1.1754682
Abstract
Switching effects have been observed in the current vs voltage curves of n‐type GaAs diodes with resistivities between 0.3 and 5 Ω‐cm. After switching, the diodes go into a constant‐voltage avalanche breakdown state with a sustaining field of 4500 V/cm. These effects are attributed to a peak in the hole generation rate α between 3,000 and 10,000 V/cm caused by high energy electrons in the (000) valley of the conduction band.This publication has 6 references indexed in Scilit:
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- Theory of negative-conductance amplification and of Gunn instabilities in "two-valley" semiconductorsIEEE Transactions on Electron Devices, 1966
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