Vanishing of Resistance and Diamagnetism Observed in a Very Thin Al Film at Room Temperature
- 1 May 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (5A) , L426
- https://doi.org/10.1143/jjap.39.l426
Abstract
A very thin Al film (thickness: 160–430 Å) was evaporated on a silicon wafer substrate with a SiO2 film and an arachidic acid Langmuir-Blodgett film. Vanishing of resistance and a repulsive force indicating diamagnetism were observed in the very thin Al film in a magnetic field at room temperature. This repulsive force was measured by an apparatus which can measure small displacements such as 10-2 µm with a laser beam.Keywords
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