Electrical conductivity of p-type CuInSe2 thin films

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Abstract
The dark ohmic conductivity σ(T) of several p‐type CuInSe2 thin films of different compositions was measured in vacuum in the temperature range 100–350 K. The room‐temperature resistivity of Cu‐rich, highly conducting films and the Cu‐poor, highly resistive films varied by seven orders of magnitude. For the most conducting films (Cu:In>1, ρ∼0.1 Ω cm), σ(T) was pseudometallic, i.e., dσ/dT≲0. The Cu‐poor films exhibited a thermally activated conductivity, i.e., σ(T)=σ0 exp(−E/kT), over a considerable temperature range. The data of post‐deposition anneal in air and subsequently in hydrogen are in excellent agreement with Meyer–Neldel type of conduction, i.e., σ(T)=σ00 exp(−E/kT0)exp(E/kT). We attribute this behavior to the compensation of the films by oxygen.

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