Measurement of Auger recombination in silicon by laser excitation
- 31 December 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (11-12) , 1603-1608
- https://doi.org/10.1016/0038-1101(78)90248-4
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- Laser-Induced Infrared Absorption in SiliconJournal of Applied Physics, 1970
- Non‐Radiative Transitions in SemiconductorsPhysica Status Solidi (b), 1970
- Fine Structure in the Absorption-Edge Spectrum of SiPhysical Review B, 1958