Self-forming InAs/GaP quantum dots by direct island growth
- 16 March 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (11) , 1356-1358
- https://doi.org/10.1063/1.121070
Abstract
InAs/GaP semiconductor quantum dots (QDs) were spontaneously formed using direct island growth (Volmer–Weber) rather than Stranski–Krastanow (S-K) growth. Structural investigations of InAs/GaP QDs suggest kinetically limited growth and show a broad size distribution. Photoluminescence and cathodoluminescence spectroscopy reveal large inhomogeneous broadening with the emission peak centering at 1.7 eV. Device applications exploiting broad optical emission in QDs are discussed.Keywords
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