Deionization effect on the evaluation of hole mobility in p-Si
- 1 April 1977
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (4) , 385-388
- https://doi.org/10.1016/0038-1101(77)90127-7
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Temperature dependence of resistivity and hole conductivity mobility in p-type siliconSolid-State Electronics, 1976
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962