Solid-immersion photoluminescence microscopy of carrier diffusion and drift in facet-growth GaAs quantum wells
- 16 November 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (20) , 2965-2967
- https://doi.org/10.1063/1.122645
Abstract
Carrier diffusion and drift in facet-growth quantum wells (QWs) on mesa-patterned substrates by molecular beam epitaxy was studied by high-resolution microscopic photoluminescence spectroscopy and imaging using a solid immersion lens at low temperatures. Under point excitation, excitation-position-dependent anisotropic carrier migration was observed, which was explained by carrier diffusion and drift due to spatial change in the quantization energy in QWs.Keywords
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