Detection of deep centers in semiconductors by strain modulated electron spin resonance: Pt+ in si
- 30 June 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 38 (11) , 1037-1039
- https://doi.org/10.1016/0038-1098(81)90012-0
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Deep levels in semiconductorsAdvances in Physics, 1980
- Deep-level-transient spectroscopy: System effects and data analysisJournal of Applied Physics, 1979
- Electrical properties of platinum in siliconJournal of Applied Physics, 1979
- Strain-modulated electron spin resonance of cubicin MgOPhysical Review B, 1978
- Deep-level spectroscopy in high-resistivity materialsApplied Physics Letters, 1978
- Photoionization cross sections in platinum-doped siliconJournal of Applied Physics, 1977
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Spin Resonance of Pd and Pt in SiliconPhysical Review B, 1962
- Electron Spin Resonance in SemiconductorsPublished by Elsevier ,1962
- Paramagnetic Resonance Absorption from Acceptors in SiliconPhysical Review Letters, 1960