Donor–Doped Lead Zirconate Titanate (PbZr1−xTixO3) Films
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Fatigue and Hysteresis Modeling of Ferroelectric MaterialsJournal of Intelligent Material Systems and Structures, 1993
- Electrodes for PbZr x Ti1 − x O 3 Ferroelectric Thin FilmsJournal of the Electrochemical Society, 1993
- Time‐Dependent Dielectric Breakdown in BaTiO3 Thin FilmsJournal of the Electrochemical Society, 1993
- Correlations Among Degradations in Lead Zirconate Titanate thin Film CapacitorsMRS Proceedings, 1993
- Mechanism of Fatigue in Ferroelectric Thin FilmsPhysica Status Solidi (a), 1992
- Fatigue modeling of lead zirconate titanate thin filmsMaterials Science and Engineering: B, 1992
- A study of Pb vacancies and Pb-O vacancy pairs in doped Pb0.85Sr0.15 (Zr0.55Ti0.45)O3 ceramics by positron annihilationJournal of Materials Science: Materials in Electronics, 1991
- Role of Oxygen Vacancies on the Ferroelectric Properties of Pzt Thin FilmsMRS Proceedings, 1991
- High-temperature electrical conductivity and point defects in lead zirconate-titanateFerroelectrics, 1977
- Space Charge Effect in Lead Zirconate Titanate Ceramics Caused by the Addition of ImpuritiesJapanese Journal of Applied Physics, 1970