The influence of hydrogen ion bombardment on the photovoltaic properties of Cu/Cu2O schottky barrier solar cells
- 1 January 1983
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 76 (3) , 87-92
- https://doi.org/10.1080/01422448308209643
Abstract
The influence of hydrogen ion bombardment on the photovoltaic properties of Cu/Cu2O Schottky barrier solar cells was investigated. Two main cases of junction formation process were considered depending on the sequence of applied procedures: thermal evaporation of thin Cu layer and irradiation of the substrate by H+ ion beam.Keywords
This publication has 1 reference indexed in Scilit:
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971