Ion beam induced depth profile modification of H, D and He implanted in Be, C and Si
- 1 December 1997
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 132 (4) , 607-619
- https://doi.org/10.1016/s0168-583x(97)00485-0
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
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