Observation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structures
- 1 February 1998
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 38 (2) , 233-237
- https://doi.org/10.1016/s0026-2714(97)84496-4
Abstract
No abstract availableKeywords
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