Dislocation etching in V₃Si

Publisher Website

1 January 1980

journal article
research article
Published by Wiley in Crystal Research and Technology

Vol. 15 (5) , 595-600
https://doi.org/10.1002/crat.19800150517

Abstract

No abstract available

Keywords

DISLOCATIONS

This publication has 4 references indexed in Scilit:

Mise en evidence d'un nouveau type de défaut réticulaire dans V₃Si par microscopic électronique à haute tension (1000 kV)
Philosophical Magazine A, 1978
Influence of chemical composition within the range of homogeneity on phase transition and transition temperature of V3Si single crystals. II. On the defect structure of V3Si single crystals
Physica Status Solidi (a), 1977
Influence of chemical composition within the range of homogeneity on phase transition and transition temperature of V3Si single crystals. I. Preparation and characterization of single crystals
Physica Status Solidi (a), 1977
Einfluß der Realstruktur auf einige Eigenschaften von Supraleitern
Crystal Research and Technology, 1974