Subthreshold behavior of silicon MOSFETs at 4.2 K
- 31 July 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (7) , 537-539
- https://doi.org/10.1016/0038-1101(82)90052-1
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Subthreshold behavior of uniformly and nonuniformly doped long-channel MOSFETIEEE Transactions on Electron Devices, 1979
- A charge-sheet model of the MOSFETSolid-State Electronics, 1978
- On the discrepancies between absorption and photoconductivity measurements in silicon inversion layersSolid State Communications, 1977
- Very small MOSFET's for low-temperature operationIEEE Transactions on Electron Devices, 1977