Initial stages of iridium-semiconductor compound formation: A field-ion-microscope study of interface atomic structures
- 6 January 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 56 (1) , 65-68
- https://doi.org/10.1103/physrevlett.56.65
Abstract
The early stages of formation of thin layers of IrSi and IrGe on Ir surfaces have been studied. Distinctive stages of growth have been observed. In the earliest stage on Ir(001), atomically resolved images show a structure resembling the c(2×2) of the substrate, which we believe to have the (011) Ir-layer structure of the IrSi and IrGe crystals. In the second stage, the (2×1) image structure on Ir(011) is identified to be the Ir layer of the IrSi(001) fundamental plane.Keywords
This publication has 6 references indexed in Scilit:
- Growth of thin single crystal NiSi2 films on Si surfaces, a field ion microscope studyApplied Physics Letters, 1985
- Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor InterfacesPhysical Review Letters, 1984
- Early stages of silicide formation on W, Ni, and Pt surfaces, an atom probe, and field ion microscope studyJournal of Vacuum Science & Technology B, 1983
- Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiEpitaxial StructuresPhysical Review Letters, 1983
- Review of binary alloy formation by thin film interactionsJournal of Vacuum Science and Technology, 1979
- Formation of iridium silicides from Ir thin films on Si substratesJournal of Applied Physics, 1979